Inspection method, lithographic apparatus, mask and substrate

ABSTRACT

A method and apparatus for obtaining focus information relating to a lithographic process. The method includes illuminating a target, the target having alternating first and second structures, wherein the form of the second structures is focus dependent, while the form of the first structures does not have the same focus dependence as that of the second structures, and detecting radiation redirected by the target to obtain for that target an asymmetry measurement representing an overall asymmetry of the target, wherein the asymmetry measurement is indicative of focus of the beam forming the target. An associated mask for forming such a target, and a substrate having such a target.

This application is a continuation of U.S. patent application Ser. No.15/104,212, filed Jun. 13, 2016, which is the U.S. national phase entryof PCT Patent Application No. PCT/EP2014/075168, which was filed on Nov.20, 2014, which claims the benefit of priority of U.S. ProvisionalPatent Application No. 61/917,041, filed Dec. 17, 2013, and U.S.Provisional Patent Application No. 61/945,656, filed Feb. 27, 2014, eachwhich is incorporated by reference herein in its entirety.

FIELD

The present description relates to methods of inspection usable, forexample, in the manufacture of devices by a lithographic technique.

BACKGROUND

A lithographic apparatus is a machine that applies a desired patternonto a substrate, usually onto a target portion of the substrate. Alithographic apparatus can be used, for example, in the manufacture ofintegrated circuits (ICs). In that instance, a patterning device, whichis alternatively referred to as a mask or a reticle, may be used togenerate a circuit pattern to be formed on an individual layer of theIC. This pattern can be transferred onto a target portion (e.g.comprising part of, one, or several dies) on a substrate (e.g. a siliconwafer). Transfer of the pattern is typically via imaging onto a layer ofradiation-sensitive material (resist) provided on the substrate. Ingeneral, a single substrate will contain a network of adjacent targetportions that are successively patterned. Known lithographic apparatusinclude so-called steppers, in which each target portion is irradiatedby exposing an entire pattern onto the target portion at one time, andso-called scanners, in which each target portion is irradiated byscanning the pattern through a radiation beam in a given direction (the“scanning”-direction) while synchronously scanning the substrateparallel or anti-parallel to this direction. It is also possible totransfer the pattern from the patterning device to the substrate byimprinting the pattern onto the substrate.

In order to monitor the lithographic process, one or more parameters ofthe patterned substrate are measured. Such parameters may include, forexample, the overlay error between successive layers formed in or on thepatterned substrate and/or critical linewidth of developedphotosensitive resist. Such measurement may be performed on a productsubstrate and/or on a dedicated metrology target. There are varioustechniques for making measurements of the microscopic structures formedin lithographic processes, including the use of a scanning electronmicroscope and various other specialized tools. A fast and non-invasiveform of specialized inspection tool is a scatterometer in which a beamof radiation is directed onto a target on the surface of the substrateand one or more properties of the scattered or reflected beam aremeasured. By comparing the one or more properties of the beam before andafter it has been reflected or scattered by the substrate, a property ofthe substrate can be determined. This can be done, for example, bycomparing the reflected beam with data stored in a library of knownmeasurements associated with one or more known substrate properties. Twomain types of scatterometer are known. A spectroscopic scatterometerdirects a broadband radiation beam onto the substrate and measures thespectrum (intensity as a function of wavelength) of the radiationscattered into a particular narrow angular range. An angularly resolvedscatterometer uses a monochromatic radiation beam and measures theintensity of the scattered radiation as a function of angle.

SUMMARY

Focus measurements in EUV lithography may be based on the variation offocus calibration marks on a substrate through different focus settings.United States Patent Application Publication No. US 2009-0135398discloses a phase grating alignment sensor which may be used to read outthe marks. The size of the focus calibration marks read using themethods disclosed in that document is 600×600 μm². Methods to measurefocus in EUV lithography are based on the detection of mark qualitychange through focus and are very sensitive to dose and processvariations.

In order to use a scatterometer for focus readout, the targets should besmaller (for example 40×40 μm²) to fulfil customer requirements such astarget area, while the number of line spaces within the beam width ofthe metrology tool should be more than 10 periods. Methods of focusmeasurement using a scatterometer may be based on the measurement ofcritical dimension (CD) and side-wall-angle (SWA) of targets (e.g.,periodic structures (gratings) on the substrate).

However, for various reasons, this method of diffraction-based metrologydoes not work so well for EUV device manufacturing processes. Inparticular, EUV resist film thicknesses are significantly lower (˜50 nmand below) compared to those of 193 nm immersion lithography (˜100 nm)which makes it difficult to extract accurate SWA and/or CD informationfrom EUV substrate.

It is desirable, for example, to provide a method enabling the use ofdiffraction-based metrology on structures exposed using EUV systems.

According to an aspect, there is provided a method of obtaining focusinformation relating to a lithographic process, the method comprising:providing at least one target, the target comprising alternating firstand second structures, the form of the second structures being focusdependent such that its form depends upon the focus of a patterned beamused to form the target and the form of the first structures not havingthe same focus dependence as that of the second structures; illuminatingthe target; and detecting radiation scattered by the target to obtainfor that target an asymmetry measurement representing an overallasymmetry of the target, wherein the asymmetry measurement is indicativeof the focus of the patterned beam when forming the target.

According to an aspect, there is provided a mask comprising a patternfor patterning a beam to form a target comprising alternating first andsecond structures, the mask comprising first structure features forforming the first structures and second structure features for formingthe second structures, wherein the second structure features areconfigured such that the form of the second structures is focusdependent such that its form depends upon the focus of the patternedbeam when forming the target and the first structure features areconfigured such that the form of the first structures does not have thesame focus dependence as that of the second structures.

According to an aspect, there is provided a substrate comprising atarget having alternating first and second structures wherein: the firststructure and the second structure both comprise a low resolutionsubstructure; and at least the second structure comprises one or morehigh resolution substructures, the number and/or size of high resolutionsubstructures in the target having been determined by the focus of apatterned beam used to form the target.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will now be described, by way of exampleonly, with reference to the accompanying schematic drawings in whichcorresponding reference symbols indicate corresponding parts, and inwhich:

FIG. 1 schematically depicts a lithographic apparatus;

FIG. 2 schematically depicts a lithographic cell or cluster;

FIG. 3 schematically depicts a first scatterometer;

FIG. 4 schematically depicts a second scatterometer;

FIG. 5 depicts an example process for reconstruction of a structure fromscatterometer measurements;

FIG. 6 depicts a further example process for reconstruction of astructure from scatterometer measurements;

FIG. 7a schematically depicts an interleaved overlay target;

FIG. 7b schematically depicts a diffraction based focus (DBF)measurement target;

FIG. 7c schematically depicts a target according to an embodiment of theinvention;

FIG. 7d schematically depicts a target according to a further embodimentof the invention;

FIGS. 8a, 8b, 8c an 8 d each schematically depicts a detail of analternative target configuration according to further embodiments of theinvention;

FIG. 9 schematically depicts a number of targets which have been exposedat different focus settings;

FIGS. 10a and 10b schematically depicts a detail of two targets exposedat best focus (FIG. 10a ) and with a degree of defocus (FIG. 10b ), andan approximation of what a scatterometer will detect as a result;

FIG. 11 is a plot of asymmetry or center of gravity on the y-axis andfocus on the x-axis which serves to illustrate how to obtain focus signinformation; and

FIGS. 12a and 12b show a two target arrangement for extraction of focussign information according to an embodiment of the invention;

FIGS. 13a and 13b show graphs of asymmetry signal amplitude (y axis)against focus (x axis) for the two targets illustrated in FIGS. 12a and12b including component signals thereof, and FIG. 13c shows thedetermination of the difference of the graphs of FIGS. 13a and 13b ; and

FIGS. 14a and 14b illustrate a method of generating a first set ofstructures and a second set of structures in two separate exposures,without the need for a second patterning device or second patterningdevice pattern.

DETAILED DESCRIPTION

FIG. 1 schematically depicts a lithographic apparatus. The apparatuscomprises:

an illumination system (illuminator) IL configured to condition aradiation beam B (e.g. UV radiation or DUV radiation);

a support structure (e.g. a mask table) MT constructed to support apatterning device (e.g. a mask) MA and connected to a first positionerPM configured to accurately position the patterning device in accordancewith certain parameters;

a substrate table (e.g. a wafer table) WT constructed to hold asubstrate (e.g. a resist-coated wafer) W and connected to a secondpositioner PW configured to accurately position the substrate inaccordance with certain parameters; and

a projection system (e.g. a refractive projection lens system) PSconfigured to project a pattern imparted to the radiation beam B bypatterning device MA onto a target portion C (e.g. comprising one ormore dies) of the substrate W.

The illumination system may include various types of optical components,such as refractive, reflective, magnetic, electromagnetic, electrostaticor other types of optical components, or any combination thereof, fordirecting, shaping, or controlling radiation.

The support structure holds the patterning device in a manner thatdepends on the orientation of the patterning device, the design of thelithographic apparatus, and other conditions, such as for examplewhether or not the patterning device is held in a vacuum environment.The support structure can use mechanical, vacuum, electrostatic or otherclamping techniques to hold the patterning device. The support structuremay be a frame or a table, for example, which may be fixed or movable asrequired. The support structure may ensure that the patterning device isat a desired position, for example with respect to the projectionsystem. Any use of the terms “reticle” or “mask” herein may beconsidered synonymous with the more general term “patterning device.”

The term “patterning device” used herein should be broadly interpretedas referring to any device that can be used to impart a radiation beamwith a pattern in its cross-section such as to create a pattern in atarget portion of the substrate. It should be noted that the patternimparted to the radiation beam may not exactly correspond to the desiredpattern in the target portion of the substrate, for example if thepattern includes phase-shifting features or so called assist features.Generally, the pattern imparted to the radiation beam will correspond toa particular functional layer in a device being created in the targetportion, such as an integrated circuit.

The patterning device may be transmissive or reflective. Examples ofpatterning devices include masks, programmable mirror arrays, andprogrammable LCD panels. Masks are well known in lithography, andinclude mask types such as binary, alternating phase-shift, andattenuated phase-shift, as well as various hybrid mask types. An exampleof a programmable mirror array employs a matrix arrangement of smallmirrors, each of which can be individually tilted so as to reflect anincoming radiation beam in different directions. The tilted mirrorsimpart a pattern in a radiation beam, which is reflected by the mirrormatrix.

The term “projection system” used herein should be broadly interpretedas encompassing any type of projection system, including refractive,reflective, catadioptric, magnetic, electromagnetic and electrostaticoptical systems, or any combination thereof, as appropriate for theexposure radiation being used, or for other factors such as the use ofan immersion liquid or the use of a vacuum. Any use of the term“projection lens” herein may be considered as synonymous with the moregeneral term “projection system”.

As here depicted, the apparatus is of a transmissive type (e.g.employing a transmissive mask). Alternatively, the apparatus may be of areflective type (e.g. employing a programmable mirror array of a type asreferred to above, or employing a reflective mask).

The lithographic apparatus may be of a type having two (dual stage) ormore tables (e.g., two or more substrate table and/or two or morepatterning device tables and/or a substrate table and table not holdinga substrate). In such “multiple stage” machines the additional tablesmay be used in parallel, or preparatory steps may be carried out on oneor more tables while one or more other tables are being used forexposure.

The lithographic apparatus may also be of a type wherein at least aportion of the substrate may be covered by a liquid having a relativelyhigh refractive index, e.g. water, so as to fill a space between theprojection system and the substrate. An immersion liquid may also beapplied to other spaces in the lithographic apparatus, for example,between the mask and the projection system. Immersion techniques arewell known in the art for increasing the numerical aperture ofprojection systems. The term “immersion” as used herein does not meanthat a structure, such as a substrate, must be submerged in liquid, butrather only means that liquid is located between the projection systemand the substrate during exposure.

Referring to FIG. 1, the illuminator IL receives a radiation beam from aradiation source SO. The source and the lithographic apparatus may beseparate entities, for example when the source is an excimer laser. Insuch cases, the source is not considered to form part of thelithographic apparatus and the radiation beam is passed from the sourceSO to the illuminator IL with the aid of a beam delivery system BDcomprising, for example, suitable directing mirrors and/or a beamexpander. In other cases the source may be an integral part of thelithographic apparatus, for example when the source is a mercury lamp.The source SO and the illuminator IL, together with the beam deliverysystem BD if required, may be referred to as a radiation system.

The illuminator IL may comprise an adjuster AD configured to adjust theangular intensity distribution of the radiation beam. Generally, atleast the outer and/or inner radial extent (commonly referred to asσ-outer and σ-inner, respectively) of the intensity distribution in apupil plane of the illuminator can be adjusted. In addition, theilluminator IL may comprise various other components, such as anintegrator IN and a condenser CO. The illuminator may be used tocondition the radiation beam, to have a desired uniformity and intensitydistribution in its cross-section.

The radiation beam B is incident on the patterning device (e.g., mask)MA, which is held on the support structure (e.g., mask table) MT, and ispatterned by the patterning device. Having traversed the patterningdevice MA, the radiation beam B passes through the projection system PS,which focuses the beam onto a target portion C of the substrate W. Withthe aid of the second positioner PW and position sensor IF (e.g. aninterferometric device, linear encoder, 2-D encoder or capacitivesensor), the substrate table WT can be moved accurately, e.g. so as toposition different target portions C in the path of the radiation beamB. Similarly, the first positioner PM and another position sensor (whichis not explicitly depicted in FIG. 1) can be used to accurately positionthe patterning device MA with respect to the path of the radiation beamB, e.g. after mechanical retrieval from a mask library, or during ascan. In general, movement of the support structure MT may be realizedwith the aid of a long-stroke module (coarse positioning) and ashort-stroke module (fine positioning), which form part of the firstpositioner PM. Similarly, movement of the substrate table WT may berealized using a long-stroke module and a short-stroke module, whichform part of the second positioner PW. In the case of a stepper (asopposed to a scanner) the support structure MT may be connected to ashort-stroke actuator only, or may be fixed. Patterning device MA andsubstrate W may be aligned using patterning device alignment marks M1,M2 and substrate alignment marks P1, P2. Although the substratealignment marks as illustrated occupy dedicated target portions, theymay be located in spaces between target portions (these are known asscribe-lane alignment marks). Similarly, in situations in which morethan one die is provided on the patterning device MA, the patterningdevice alignment marks may be located between the dies.

The depicted apparatus could be used in at least one of the followingmodes:

1. In step mode, the support structure MT and the substrate table WT arekept essentially stationary, while an entire pattern imparted to theradiation beam is projected onto a target portion C at one time (i.e. asingle static exposure). The substrate table WT is then shifted in the Xand/or Y direction so that a different target portion C can be exposed.In step mode, the maximum size of the exposure field limits the size ofthe target portion C imaged in a single static exposure.

2. In scan mode, the support structure MT and the substrate table WT arescanned synchronously while a pattern imparted to the radiation beam isprojected onto a target portion C (i.e. a single dynamic exposure). Thevelocity and direction of the substrate table WT relative to the supportstructure MT may be determined by the (de-) magnification and imagereversal characteristics of the projection system PS. In scan mode, themaximum size of the exposure field limits the width (in the non-scanningdirection) of the target portion in a single dynamic exposure, whereasthe length of the scanning motion determines the height (in the scanningdirection) of the target portion.

3. In another mode, the support structure MT is kept essentiallystationary holding a programmable patterning device, and the substratetable WT is moved or scanned while a pattern imparted to the radiationbeam is projected onto a target portion C. In this mode, generally apulsed radiation source is employed and the programmable patterningdevice is updated as required after each movement of the substrate tableWT or in between successive radiation pulses during a scan. This mode ofoperation can be readily applied to maskless lithography that utilizesprogrammable patterning device, such as a programmable mirror array of atype as referred to above.

Combinations and/or variations on the above described modes of use orentirely different modes of use may also be employed.

As shown in FIG. 2, the lithographic apparatus LA forms part of alithographic cell LC, also sometimes referred to a lithocell or cluster,which also includes apparatus to perform pre- and post-exposureprocesses on a substrate. Conventionally these include one or more spincoaters SC to deposit a resist layer, one or more developers DE todevelop exposed resist, one or more chill plates CH and/or one or morebake plates BK. A substrate handler, or robot, RO picks up a substratefrom input/output ports I/O1, I/O2, moves it between the differentprocess apparatus and delivers it to the loading bay LB of thelithographic apparatus. These devices, which are often collectivelyreferred to as the track, are under the control of a track control unitTCU which is itself controlled by the supervisory control system SCS,which also controls the lithographic apparatus via lithography controlunit LACU. Thus, the different apparatus can be operated to maximizethroughput and processing efficiency.

In order that the substrates that are exposed by the lithographicapparatus are exposed correctly and consistently, it is desirable toinspect exposed substrates to measure a property such as overlay errorbetween subsequent layers, line thickness, critical dimension (CD), etc.If an error is detected, an adjustment may be made to an exposure of asubsequent substrate, especially if the inspection can be done soon andfast enough that one or more other substrates of the same batch arestill to be exposed. Also, an already exposed substrate may be strippedand reworked—to improve yield—or discarded, thereby avoiding performingexposure on substrate known to be faulty. In a case where only sometarget portions of a substrate are faulty, further exposures can beperformed only on those target portions which are good.

An inspection apparatus is used to determine a property of thesubstrate, and in particular, how one or more properties of differentsubstrates or different layers of the same substrate vary from layer tolayer. The inspection apparatus may be integrated into the lithographicapparatus LA or the lithocell LC or may be a stand-alone device. Toenable most rapid measurements, it is desirable that the inspectionapparatus measure properties in the exposed resist layer immediatelyafter the exposure. However, the latent image in the resist has a verylow contrast—there is only a very small difference in refractive indexbetween the parts of the resist which have been exposed to radiation andthose which have not—and not all inspection apparatus have sufficientsensitivity to make useful measurements of the latent image. Thereforemeasurements may be taken after the post-exposure bake step (PEB) whichis customarily the first step carried out on an exposed substrate andincreases the contrast between exposed and unexposed parts of theresist. At this stage, the image in the resist may be referred to assemi-latent. It is also possible to make measurements of the developedresist image—at which point either the exposed or unexposed parts of theresist have been removed—or after a pattern transfer step such asetching. The latter possibility limits the possibilities for rework of afaulty substrate but may still provide useful information.

FIG. 3 depicts a scatterometer which may be used in an embodiment of thepresent invention. It comprises a broadband (white light) radiationprojector 2 which projects radiation onto a substrate W. The reflectedradiation is passed to a spectrometer detector 4, which measures aspectrum 10 (intensity as a function of wavelength) of the specularreflected radiation. From this data, the structure or profile givingrise to the detected spectrum may be reconstructed by processing unitPU, e.g. by Rigorous Coupled Wave Analysis and non-linear regression orby comparison with a library of simulated spectra as shown at the bottomof FIG. 3. In general, for the reconstruction, the general form of thestructure is known and some parameters are assumed from knowledge of theprocess by which the structure was made, leaving only a few parametersof the structure to be determined from the scatterometry data. Such ascatterometer may be configured as a normal-incidence scatterometer oran oblique-incidence scatterometer.

Another scatterometer that may be used is shown in FIG. 4. In thisdevice, the radiation emitted by radiation source 2 is collimated usinglens system 12 and transmitted through interference filter 13 andpolarizer 17, reflected by partially reflected surface 16 and is focusedonto substrate W via a microscope objective lens 15, which has a highnumerical aperture (NA), desirably at least 0.9 or at least 0.95. Animmersion scatterometer may even have a lens with a numerical apertureover 1. The reflected radiation then transmits through partiallyreflecting surface 16 into a detector 18 in order to have the scatterspectrum detected. The detector may be located in the back-projectedpupil plane 11, which is at the focal length of the lens system 15,however the pupil plane may instead be re-imaged with auxiliary optics(not shown) onto the detector. The pupil plane is the plane in which theradial position of radiation defines the angle of incidence and theangular position defines the azimuth angle of the radiation. Thedetector is desirably a two-dimensional detector so that atwo-dimensional angular scatter spectrum of a substrate target 30 can bemeasured. The detector 18 may be, for example, an array of CCD or CMOSsensors, and may use an integration time of, for example, 40milliseconds per frame.

A reference beam is often used for example to measure the intensity ofthe incident radiation. To do this, when the radiation beam is incidenton the beam splitter 16 part of it is transmitted through the beamsplitter as a reference beam towards a reference mirror 14. Thereference beam is then projected onto a different part of the samedetector 18 or alternatively on to a different detector (not shown).

A set of interference filters 13 is available to select a wavelength ofinterest in the range of, say, 405-790 nm or even lower, such as 200-300nm. The interference filter may be tunable rather than comprising a setof different filters. A grating could be used instead of interferencefilters.

The detector 18 may measure the intensity of scattered radiation at asingle wavelength (or narrow wavelength range), the intensity separatelyat multiple wavelengths or integrated over a wavelength range.Furthermore, the detector may separately measure the intensity oftransverse magnetic- and transverse electric-polarized radiation and/orthe phase difference between the transverse magnetic- and transverseelectric-polarized radiation.

Using a broadband radiation source (i.e. one with a wide range ofradiation frequencies or wavelengths—and therefore of colors) ispossible, which gives a large etendue, allowing the mixing of multiplewavelengths. The plurality of wavelengths in the broadband desirablyeach has a bandwidth of AA and a spacing of at least 2 Δλ (i.e. twicethe bandwidth). Several “sources” of radiation can be different portionsof an extended radiation source which have been split using fiberbundles. In this way, angle resolved scatter spectra can be measured atmultiple wavelengths in parallel. A 3-D spectrum (wavelength and twodifferent angles) can be measured, which contains more information thana 2-D spectrum. This allows more information to be measured whichincreases metrology process robustness. This is described in more detailin European Patent Application Publication No. EP1628164, which isincorporated herein by reference.

The target 30 on substrate W may be a 1-D grating, which is printed suchthat after development, the bars are formed of solid resist lines. Thetarget 30 may be a 2-D grating, which is printed such that afterdevelopment, the grating is formed of solid resist pillars or vias inthe resist. The bars, pillars or vias may alternatively be etched intothe substrate. This pattern is sensitive to chromatic aberration in thelithographic projection apparatus, particularly the projection systemPS, and illumination symmetry and the presence of such aberration willmanifest itself in a variation in the printed grating. Accordingly, thescatterometry data of the printed gratings is used to reconstruct thegratings. The parameters of the 1-D grating, such as line widths andshapes, or parameters of the 2-D grating, such as pillar or via widthsor lengths or shapes, may be input to the reconstruction process,performed by processing unit PU, from knowledge of the printing stepand/or other scatterometry processes.

As described above, the target is on the surface of the substrate. Thistarget will often take the shape of a series of lines in a grating orsubstantially rectangular structures in a 2-D array. The purpose ofrigorous optical diffraction theories in metrology is effectively thecalculation of a diffraction spectrum that is reflected from the target.In other words, target shape information is obtained for CD (criticaldimension) uniformity and overlay metrology. Overlay metrology is ameasuring in which the overlay of two targets is measured in order todetermine whether two layers on a substrate are aligned or not. CDuniformity is simply a measurement of the uniformity of the grating onthe spectrum to determine how the exposure system of the lithographicapparatus is functioning. Specifically, CD, or critical dimension, isthe width of the object that is “written” on the substrate and is thelimit at which a lithographic apparatus is physically able to write on asubstrate.

Using one of the scatterometers described above in combination with amodel of a target structure such as the target 30 and its diffractionproperties, measurement of the shape and other parameters of thestructure can be performed in a number of ways. In a first type ofprocess, represented by FIG. 5, a diffraction pattern based on a firstestimate of the target shape (a first candidate structure) is calculatedand compared with the observed diffraction pattern. Parameters of themodel are then varied systematically and the diffraction re-calculatedin a series of iterations, to generate new candidate structures and soarrive at a best fit. In a second type of process, represented by FIG.6, diffraction spectra for many different candidate structures arecalculated in advance to create a ‘library’, of diffraction spectra.Then the diffraction pattern observed from the measurement target iscompared with the library of calculated spectra to find a best fit. Bothmethods can be used together: a coarse fit can be obtained from alibrary, followed by an iterative process to find a best fit.

Referring to FIG. 5 in more detail, the way the measurement of thetarget shape and/or a material property is carried out will be describedin summary. The target will be assumed for this description to beperiodic in only 1 direction (1-D structure). In practice it may beperiodic in 2 or 3 directions (2- or 3-dimensional structure), and theprocessing will be adapted accordingly.

At 502, the diffraction pattern of the actual target on the substrate ismeasured using a scatterometer such as those described above. Thismeasured diffraction pattern is forwarded to a calculation system suchas a computer. The calculation system may be the processing unit PUreferred to above, or it may be a separate apparatus.

At 503, a ‘model recipe’ is established which defines a parameterizedmodel of the target structure in terms of a number of parameters p_(i)(p₁, p₂, p₃ and so on). These parameters may represent for example, in a1D periodic structure, the angle of a side wall, the height or depth ofa feature, and/or the width of the feature. One or more properties ofthe target material and one or more underlying layers are alsorepresented by a parameter such as refractive index (at a particularwavelength present in the scatterometry radiation beam). Specificexamples will be given below. Significantly, while a target structuremay be defined by dozens of parameters describing its shape and materialproperty, the model recipe will define many of these to have fixedvalues, while others are to be variable or ‘floating’ parameters for thepurpose of the following process steps. The process by which the choicebetween fixed and floating parameters is made is described hereafter.Moreover, ways will be introduced in which parameters can be permittedto vary without being fully independent floating parameters. For thepurposes of describing FIG. 5, only the variable parameters areconsidered as parameters pi.

At 504, a model target shape is estimated by setting initial valuesp_(i) ⁽⁰⁾ for the floating parameters (i.e. p₁ ⁽⁰⁾p₂ ⁽⁰⁾, p₃ ⁽⁰⁾ and soon). Each floating parameter will be generated within a certainpredetermined range, as defined in the recipe.

At 506, the parameters representing the estimated shape, together withthe one or more optical properties of the different elements of themodel, are used to calculate one or more scattering properties, forexample using a rigorous optical diffraction method such as RCWA or anyother solver of Maxwell equations. This gives an estimated or modeldiffraction pattern of the estimated target shape.

At 508, 510, the measured diffraction pattern and the model diffractionpattern are then compared and their similarity and/or difference areused to calculate a “merit function” for the model target shape.

At 512, assuming that the merit function indicates that the model needsto be improved before it represents accurately the actual target shape,one or more new parameters p₁ ⁽¹⁾, p₂ ⁽¹⁾, p₃ ⁽¹⁾, etc. are estimatedand fed back iteratively into step 506. Steps 506-512 are repeated.

In order to assist the search, the calculations in step 506 may furthergenerate partial derivatives of the merit function, indicating thesensitivity with which increasing or decreasing a parameter willincrease or decrease the merit function, in this particular region inthe parameter space. The calculation of merit functions and the use ofderivatives is generally known in the art, and will not be describedhere in detail.

At 514, when the merit function indicates that this iterative processhas converged on a solution with a desired accuracy, the currentlyestimated one or more parameters are reported as the measurement of theactual target structure.

The computation time of this iterative process is largely determined bythe forward diffraction model used, i.e. the calculation of theestimated model diffraction pattern using a rigorous optical diffractiontheory from the estimated target structure. If more parameters arerequired, then there are more degrees of freedom. The calculation timeincreases in principle with the power of the number of degrees offreedom. The estimated or model diffraction pattern calculated at 506can be expressed in various forms. Comparisons are simplified if thecalculated pattern is expressed in the same form as the measured patterngenerated in step 502 For example, a modelled spectrum can be comparedeasily with a spectrum measured by the apparatus of FIG. 3; a modelledpupil pattern can be compared easily with a pupil pattern measured bythe apparatus of FIG. 4.

Throughout this description from FIG. 5 onward, the term ‘diffractionpattern’ will be used on the assumption that the scatterometer of FIG. 4is used. The skilled person can readily adapt the teaching to differenttypes of scatterometer, or even other types of measurement instrument.

FIG. 6 illustrates a further example process in which a plurality ofmodel diffraction patterns for different estimated target shapes(candidate structures) are calculated in advance and stored in a libraryfor comparison with a real measurement. The underlying principles andterminology are the same as for the process of FIG. 5. The steps of theFIG. 6 process are:

At 602, the process of generating the library begins. A separate librarymay be generated for each type of target structure. The library may begenerated by a user of the measurement apparatus according to need, ormay be pre-generated by a supplier of the apparatus.

At 603, a ‘model recipe’ is established which defines a parameterizedmodel of the target structure in terms of a number of parameters p_(i)(p₁, p₂, p₃ and so on). Considerations are similar to those in step 503of the iterative process.

At 604, a first set of parameters p₁ ⁽⁰⁾, p₂ ⁽⁰⁾, p₃ ⁽⁰⁾, etc. isgenerated, for example by generating random values of each of theparameters, each within its expected range of values.

At 606, a model diffraction pattern is calculated and stored in alibrary, representing the diffraction pattern expected from a targetshape represented by the one or more parameters.

At 608, a new set of shape parameters p₁ ⁽¹⁾, p₂ ⁽¹⁾, p₃ ⁽¹⁾, etc. isgenerated. Steps 606-608 are repeated tens, hundreds or even thousandsof times, until the library which comprises all the stored modelleddiffraction patterns is judged sufficiently complete. Each storedpattern represents a sample point in the multi-dimensional parameterspace. The samples in the library should populate the sample space witha sufficient density that any real diffraction pattern will besufficiently closely represented.

At 610, after the library is generated (though it could be before), thereal target 30 is placed in the scatterometer and its diffractionpattern is measured.

At 612, the measured pattern is compared with one or more modelledpatterns stored in the library to find the best matching pattern. Thecomparison may be made with every sample in the library, or a moresystematic searching strategy may be employed, to reduce computationalburden.

At 614, if a match is found then the estimated target shape used togenerate the matching library pattern can be determined to be theapproximate object structure. The one or more shape parameterscorresponding to the matching sample are output as the one or moremeasured shape parameters. The matching process may be performeddirectly on the model diffraction signals, or may be performed on asubstitute model which is optimized for fast evaluation.

At 616, optionally, the nearest matching sample is used as a startingpoint, and a refinement process is used to obtain the one or more finalparameters for reporting. This refinement process may comprise aniterative process very similar to that shown in FIG. 5, for example.

Whether refining step 616 is used or not is a matter of choice for theimplementer. If the library is very densely sampled, then iterativerefinement may not be needed because a good match may always be found.On the other hand, such a library might be too large for practical use.A practical solution is thus to use a library search for a coarse set ofparameters, followed by one or more iterations using the merit functionto determine a more accurate set of parameters in order to report theset of parameters of the target substrate with a desired accuracy. Whereadditional iterations are performed, it would be an option to add thecalculated diffraction patterns and associated refined parameter sets asnew entries in the library. In this way, a library can be used initiallywhich is based on a relatively small amount of computational effort, butwhich builds into a larger library using the computational effort of therefining step 616. Whichever scheme is used, a further refinement of thevalue of one or more of the reported variable parameters can also beobtained based upon the goodness of the matches of multiple candidatestructures. For example, the set of parameter values finally reportedmay be produced by interpolating between parameter values of two or morecandidate structures, assuming both or all of those candidate structureshave a high matching score.

The computation time of this iterative process is largely determined bythe forward diffraction model at steps 506 and 606, i.e. the calculationof the estimated model diffraction pattern using a rigorous opticaldiffraction theory from the estimated target shape.

As the dimensions of features made using lithography become smaller,lithography is becoming a more critical factor for enabling miniature ICor other devices and/or structures to be manufactured. A theoreticalestimate of the limits of pattern printing can be given by the Rayleighcriterion for resolution as shown in equation (1):

$\begin{matrix}{{CD} = {k_{1} \star \frac{\lambda}{NA}}} & (1)\end{matrix}$

where λ is the wavelength of the radiation used, NA is the numericalaperture of the projection system used to print the pattern, k₁ is aprocess dependent adjustment factor, also called the Rayleigh constant,and CD is the feature size (or critical dimension) of the printedfeature. It follows from equation (1) that reduction of the minimumprintable size of features can be obtained in three ways: by shorteningthe exposure wavelength λ, by increasing the numerical aperture NA or bydecreasing the value of k₁.

In order to shorten the exposure wavelength and, thus, reduce theminimum printable size, it has been proposed to use extreme ultraviolet(EUV) radiation. EUV radiation is electromagnetic radiation having awavelength within the range of 5-20 nm, for example within the range of13-14 nm. It has further been proposed that EUV radiation with awavelength of less than 10 nm could be used, for example within therange of 5-10 nm such as 6.7 nm or 6.8 nm. Such radiation is termedextreme ultraviolet radiation or soft x-ray radiation. Possible sourcesinclude, for example, laser-produced plasma sources, discharge plasmasources, or sources based on synchrotron radiation provided by anelectron storage ring.

One possible way of enabling use of diffraction-based metrology in EUVsystems is to use a phase shift patterning device. Such a phase shiftpatterning device comprises trenches (or other phase shift features)which create a phase shift in the redirected beam so as to deflect theradiation beam off-axis. The degree of phase shift (and therefore degreeof deflection) is dependent upon the degree of defocus. The resultanttarget may comprise first structures which are printed via patterningdevice features not having trenches, and therefore are printed at aposition on the substrate which is independent of focus, and secondstructures which are printed via patterning device features havingtrenches, and therefore are printed at a position on the substrate whichis dependent of focus. In this way the position of the second structures(with reference to the first structures) is focus dependent. However,such an arrangement may not desirable as it may require a complex anddifficult to manufacture patterning device.

The measurement method proposed herein makes use of a modified versionof an interlaced scatterometer overlay target for use with doublepatterning overlay measurements. The modified target is a combination ofthis interlaced overlay target and the focus calibration marks describedabove.

FIG. 7a shows an interlaced scatterometer overlay target 700, whichcomprises alternating first structures 705 and second structures 710.Neither first nor second structures 705, 710 are deliberately focusdependent. Specifically in this example, the printed line asymmetry offirst and second structures 705, 710 is not focus sensitive. There willof course always be some focus dependency in the formation of anyfeature (e.g. its profile will change as a function of focus), which isprecisely why focus control is significant in lithographic processes.

FIG. 7b illustrates a DBF target 715 configured for diffraction basedfocus (DBF) measurements. It comprises plural DBF structures 720, eachof which comprises high resolution substructures 725. The highresolution substructures 725 on top of a base pitch creates anasymmetric resist profile for each DBF structure 720, with the degree ofasymmetry being dependent upon focus. Consequently a metrology tool canmeasure the degree of asymmetry from such a DBF target 715 and translatethis into the scanner focus.

While the DBF target 715 enables diffraction based focus measurements,it may not be suitable for use in all situations. EUV resist filmthicknesses are significantly smaller than those used in immersionlithography which makes it difficult to extract accurate asymmetryinformation from the asymmetric profile of the structures forming partof a target. In addition such structures may not comply with the strictdesign constraints applicable to certain product structures. During thedevice making process all features of a pattern of the patterning deviceshould print and stand up to subsequent processing steps. Devicemanufacturers use design rules as a means to restrict the featuredesigns to help ensure the printed features conform to their processrequirements. One such design rule relates to the allowable size ofstructures. Another such design rule is pattern density, which restrictsthe density of a resulting resist pattern to be within a particularrange.

Pattern density is closely correlated to defectivity since polish anddiffusion steps may require a certain level of uniformity to avoidgenerating defects. This is significant in (for example) a spacerprocess where a thin layer is deposited over the resist features, andfurther process steps reduce the features to small lines wherever resistedges were once present. Achieving minimum pattern density requirementsafter a spacer process means it may not be possible to use largefeatures since only the resist edges are transferred to the substrate asthin lines. In this regard the DBF structures 720 of DBF target 715 maybe too large. Therefore, to increase spacer process pattern density, thenumber of resist pattern edges may need to be increased.

Metrology features should also comply with these design rules since theymight otherwise become a source for defects. Metrology targets shouldtherefore be composed of small features yet still be able to generate asignal that the metrology tool can detect given limitations inwavelength and capture angle. For the DBF targets 715 the resultingpattern density after a spacer process may be significantly too small.

FIG. 7c illustrates a modified target 730 in accordance with anembodiment of the invention. Target 730 comprises first structures 740and second structures 750. First structures 740 are not focus dependentand are essentially similar to first structures 705 of FIG. 7a . Secondstructures 750 comprise high resolution substructures 760 and a lowresolution substructure 770. High resolution substructures 760 shouldhave a width smaller than 200 nm, so as not to be detected as individualstructures by a scatterometer. In various embodiments, the highresolution substructures 760 may all have widths smaller than 100 nm,smaller than 50 nm or smaller than 25 nm. In an embodiment the highresolution substructures 760 and low resolution substructure 770 mayboth have similar CDs; for example the low resolution substructure 770may be only 10-40 nm wider than the high resolution substructures 760.

The effect of the high resolution of the substructures 760 is that theyonly print on the substrate when the radiation beam used to print thetarget 730 is within a best focus region. Outside of the best focusregion (i.e. when the beam is defocussed) substructures 760 (or parts ofthem) do not print. Consequently, the form of the printed secondstructures 750 depends upon the focus of the radiation beam. This is incontrast to the targets resultant from a phase shift mask describedabove, for which it is the position, not the form, of the secondstructures that are focus dependent. In this way, a more conventionalpatterning device can be used, without the need for trenches or similarfeatures for altering phase.

The change in form of the second structures 750 may manifest itself in ashift in their center of gravity (CoG) which may be detected as pupilasymmetry by the scatterometer. The CoG shift can be calibrated againsta programmed focus offset substrate. By exposing a substrate with knownfocus offsets one can calibrate the behavior of the designed target (asdetected by a scatterometer) as a function of focus. The result is acurve similar to curve 1100 in FIG. 11. With this calibrated curve,substrates can be exposed at best focus and the measured scatterometerresponse can be compares against curve 1100 to determine focus positionfor each measurement on the substrate.

In addition, the presence of first structures 740 between the secondstructures 750 increases the pattern density compared to the DBF target715.

FIG. 7d shows a target 730′ comprising first structures 775 and secondstructures 750 which are both focus dependent, as both comprise highresolution substructures 760 and a low resolution substructure 770. Thefocus dependence of first structures 775 is made to differ from thefocus dependence of second structures 750 by the high resolutionsubstructures 760 being on one side of low resolution substructure 770for the first structures 775, and on the opposite side of low resolutionsubstructure 770 for the second structures 750. In this way the CoGshift through focus for first structures 775 and second structures 750will be in the opposite direction.

Target 730, 730′ shows high resolution substructures 760 which comprisea number of high resolution bars, each of similar linewidth (in theregion of 15-25 nm; e.g., 22 nm), and extending in the same direction asfirst structure 740 and low resolution substructure 770. However, otherconfigurations are possible.

FIG. 8 shows a detail of example further configurations of secondstructure 750. In each case a single example of a first structure 810,810′ and second structure 850, 850′, 850″ is shown. To make a target,these pairs of structures are repeated several times in a similar manneras shown in FIG. 7c , or as shown in FIG. 7d in the example of FIG.8(d).

FIG. 8(a) shows a second structure 850 similar to second structure 750,except that the high resolution substructures 860 vary in resolution(linewidth), going from lower resolution to higher resolution in thedirection away from low resolution substructure 870. This providesincreased variation in the form of second structure 850 through focus,in that a small degree of defocus will mean that only the highresolution substructure(s) 860 having the highest resolution will failto print, with the number of high resolution substructures 860 whichfail to print increasing as the degree of defocus increases. This meansthat there are a number of different focus dependent forms which thesecond structure 850 may take, and therefore a number of possible centerof gravity shifts in the second structure 850, depending on the degreeof defocus. The smallest of the high resolution substructures 860 may beas narrow as the lithographic apparatus resolution allows.

In an embodiment the widths of high resolution substructures 860 varybetween 15 nm and 25 nm. High resolution substructures 860 may all havedifferent linewidths, or may comprise adjacent substructures of the samelinewidth. For example, while the high resolution substructures 860 maybe arranged in order of decreasing linewidth as described in theprevious paragraph, this arrangement may include some (e.g., the twothinnest) adjacent high resolution substructures 860 having the samelinewidth.

FIG. 8(b) shows a second structure 850′ comprising horizontalsubstructures 860′, extending in a direction normal to that of lowresolution substructure 870. The second structure 850′ is essentiallythe same as DBF structure 720 in FIG. 7b . These structures show a lineend (tip-to-tip) focus response to create a CoG shift of secondstructure 850′ as a function of focus. As all the horizontalsubstructures 860′ have the same CD at the patterning device, the righthand side of the line ends “pull back” as a function of defocus, suchthat the length of each substructure 860′ varies with defocus: thegreater the degree of defocus, the shorter that each horizontalsubstructure 860′ will be.

There can be an advantage in having vertical substructures or horizontalsubstructures, depending on the application. One or the other may bemore sensitive to process variation, dose variation or a specificaberration. When considering target designs that behave as close aspossible to the actual product (w.r.t. focus and aberration sensitivity)one could consider any designs illustrated in FIG. 7 or FIG. 8, or anyother design falling within the scope of the claims.

FIG. 8(c) shows a second structure 850″ comprising substructures 860″which essentially combine the concepts of substructure 860 andsubstructure 860′. Second structure 850″ comprises a two dimensionalarray of substructures 860″, arranged such that the width of eachsubstructure 860″ decreases in the horizontal direction. Such anarrangement can potentially create product-like aberration sensitivity.

FIG. 8(d) shows a second structure 850 essentially similar to thatillustrated in FIG. 8(a) adjacent to a first structure 810′ comprisinghigh resolution substructures 880. High resolution substructures 880 aresimilar to high resolution substructures 860, but arranged in theopposite direction (thin to thick in comparison with thick to thin).High resolution substructures 880 are also on the opposite side of lowresolution substructure 890, in comparison to high resolutionsubstructures 860 relative to low resolution substructure 870.

FIG. 9 shows a target 900 having second structures 950 a of the typeshown in FIG. 8(a), printed at best focus f₀ and targets 910, 910′, 920,920′, 930, 930′ printed at different degrees of defocus, and havingsecond structures 950 b, 950 c, 950 d. Target 900 has all highresolution substructures 960 printed, even those with the highestresolution. Targets 910 and 910′, each of which being printed with adegree of defocus of the same magnitude but different sign withreference to best focus f₀, have second structures 950 b with fewer highresolution substructures 960 printed. This pattern is repeated fortargets 920, 920′ and targets 930, 930′; in each case as the magnitudeof the degree of defocus increases, the number of printed highresolution substructures 960 decreases.

FIG. 10 illustrates the center of gravity shift between (a) the printedsecond structure 950 a of target 900 and (b) the printed secondstructure 950 c of target 920 (or 920′). In each case the top drawingshows the actual printed target 900, 920, while the bottom drawing showsan approximation of what a scatterometer inspecting each target 900, 920effectively “sees” (i.e., detects) following modeling/analyzing of theactual scatterometry signal. In the bottom drawing it can be seen thatthe second structures 950 a, 950 c are seen by the scatterometer aseffective structures 1060, 1060 c having a width dependent on the numberof high resolution substructures 960 printed. In FIG. 10(a) the centerof gravity of the seen first effective structure 1060 (referenced to thecorresponding first structure 1040) is labelled x. In FIG. 10(b) thecenter of gravity of seen second effective structure 1060 c can be seennot to equal x.

The center of gravity shift is detectable by the scatterometer as anasymmetry between positive and negative diffraction orders of thediffracted radiation. Therefore detected asymmetry is an indication offocus and consequently, by using a scatterometer to measure theasymmetry, the focus used to print the target may be determined. Theasymmetry of the target will affect the diffraction pattern forcorresponding positive and negative diffraction orders. If there is noasymmetry in a target, then the positive and negative diffraction orderswill have the same spectral profile. Analysis of the differences in thespectral components of the positive and negative diffraction orders canbe used to determine the asymmetry of the target. The phrase “positiveand negative diffraction orders” refers to any of the 1^(st) and higherdiffraction orders. Diffraction orders include zeroth order (specularreflection) which is neither positive nor negative, and then higherorders which exist in complementary pairs, conveniently referred to aspositive and negative. Non-zero orders can be referred to as higherorders. Thus, +1^(st) order and −1^(st) order are examples of positiveand negative orders, as are +2^(nd) and −2^(nd), +3^(rd) and −3^(rd) andso forth. The examples will be illustrated primarily with reference to+1^(st) and −1^(st) orders, without limitation.

FIG. 11 is a plot 1100 of asymmetry or center of gravity on the y-axisand focus on the x-axis which serves to illustrate how to obtain focussign information. In FIG. 9, it can be seen that the printed targets 910and 910′ are indistinguishable, as are targets 920 and 920′ and targets930 and 930′. For each pair, the magnitude of the degree of defocus isthe same, but the sign is different. This uniqueness problem means thata method to extract focus sign information is desirable. The methodcomprises exposing the substrate purposely off-focus with a known offsetso that all the focus values are on one side of the peak of plot 1100.For example, the known focus offset will mean that all measured focusvalues are within region 1110. The known focus offset can then be takenaway from the measured focus values to find the actual focus values withcorrect sign.

The proposed method may comprise a calibration process followed by amonitor and control process. The calibration process comprises exposinga focus exposure matrix (FEM) substrate and measuring higher orderasymmetry as a function of focus so as to calculate a focus calibrationcurve. The FEM substrate may be used as a calibration substrate for ascatterometer. As is known in the art, a FEM substrate comprises asubstrate that has been coated with a photoresist onto which a patternis exposed with multiple combinations of focus and exposure offsets. Themonitor and control process may comprise exposing a monitor substrateoff-focus (to obtain sign information as described above) and measuringhigher order asymmetry. This measured higher order asymmetry can then beconverted to focus using the focus calibration curve calculated duringthe calibration process.

To determine the calibration curve from the monitor substrate, a numberof fields may be exposed with programmed focus offsets (e.g., Rx tilt).This reduces process dependency.

Because of the need to expose the monitor substrate off-focus, themethod is more easily applicable to off-product measurement. It isclearly undesirable to expose on-product while purposely off-focus.However, the method may be adapted for on-product focus control byproviding a target design which has a patterning device topography thattakes advantage of three-dimensional mask (M3D) effects. The maskpatterning device may be such that during exposure, the productstructures are formed in focus and the target is formed out of focuswith a focus offset. Such a mask patterning device may comprise M3Dfeatures (such as, for example, scatter bars) to create M3D induced bestfocus offsets to the target, with respect to the product features beingexposed at best focus. In an embodiment the M3D features may comprisethe high resolution substructures of previous embodiments. These targetshaving focus-dependent M3D features can then be measured and the focusdetermined, in a manner similar to that already described, taking intoaccount the best focus offset resultant from the M3D effect.

FIGS. 12 and 13 illustrate a further method for obtaining signinformation. To understand this method it should be appreciated that thefocus response of the interlaced targets described above is actually acombination of the printed asymmetric line response (which isapproximately linear as a function of focus) and the interlaced targetdesign (difference in center of gravity (CoG) between the two structurepopulations). This is illustrated by FIG. 12(a) and FIG. 13a . FIG.12(a) is an interlaced target design 1200 as already discussed, inparticular in relation to FIG. 8(b) (although this concept is applicableto any of the other interlaced target designs described herein). Thetarget 1200 comprises first structures 1210 and second structures 1220.First structures may be, for example, of any form disclosed herein.Second structures 1220 are shown here as being similar to DBF structures720 (FIG. 7b ) or second structures 870 in FIG. 8(b). Curve 1330 of FIG.13a is the resultant signal response (y-axis) through focus (x-axis).This curve 1330 comprises the sum of curve 1310, which represents thesignal response to focus due to CoG shift of target 1200 and line 1320,which represents the signal response to focus due to the asymmetry ofthe second structures 1220.

It is proposed to solve the sign issue of target 1200 by combiningsignals of multiple (interlaced) targets. By changing the designproperties of e.g. the asymmetric line, while keeping the symmetric linesegment placement with respect to the asymmetric line identical, theuniqueness problem can be addressed. Such a target 1230 is illustratedin FIG. 12(b). The target comprises a fourth structure 1240 which isdifferent in form to second structure 1220, but is of the same basicdesign, the difference relating to parameters such as line width and/orlength of the high definition features. The relative placement of thirdstructures 1250 (which are essentially the same as first structures1210) and fourth structures 1240 in target 1230 is similar to therelative placement of first structures 1210 and second structures 1220in target 1200.

As can be seen in FIG. 13b , the Bossung type behavior of the interlacedtargets 1200 and 1230 remains similar, as shown by the similarity ofcurves 1310 and 1340 (where curve 1340 represents the signal response tofocus due to CoG shift of target 1230), whereas the asymmetric linecontent 1350 changes as the form of fourth structure 1240 differs fromthat of second structure 1220. The resultant focus response curve 1360is also shown. Effectively this means that the Bossung top of thedifferent interlaced targets 1200, 1230 will shift with respect to eachother. The uniqueness issue can then be addressed by:

finding the difference of both asymmetry signals 1330, 1350 asillustrated in FIG. 13c —the resulting signal 1360 will depend on thesimilarity between Bossung-like behavior of the CoG signal and thedifference of the asymmetry line signal; and/or

by making a (multi-variate) Focus (Dose) model of both targets 1200,1230.

It should be noted that in principle the third and fourth structures maybe dissimilar to the first and second structures. In principle theplacement of the third and fourth structures may be dissimilar to thatof the first and second structures.

Additionally, a best focus offset can be preselected into the targetresponse by performing an optimization procedure of the asymmetricstructure response and placement of interlaced line structures. Thismethod of designing for a Bossung top offset may be preferred to that ofusing M3D effects as described above, as the M3D effects areunpredictable and can vary from patterning device to patterning device,and across the patterning device pattern.

This direct method of obtaining sign information (as illustrated in FIG.13c ) is more applicable to non-EUV applications (thicker resists) wherethe asymmetry of the structure is more prominent. In such thicker resistapplications, a main reason for using interlaced targets is to increasepattern density. The pre-selection of a best focus offset can be used inEUV, thin resist applications, using the sign extraction method asillustrated in FIG. 11. In principle, however, the best focus offsetmethod works for any measurement in which the best focus setting is anoptimization parameter (so also for non-EUV applications). A typicalapplication could be a monitor type application. For on-productapplications, the best focus settings are determined by the user'sprocess, and thus a focus measurement solution should be devised thatworks at the user specified conditions.

It is mentioned above that the DBF target 715 shown in FIG. 7b may notmeet pattern density requirements of certain design rules. In order toincrease the pattern density, the target design may be changed either byreducing the base pitch or adding in dummy features within the target.Reducing the base pitch however is likely not viable since this willcause the diffraction orders used by the metrology tool to spread beyondthe resolution of the current optics. To address this, as alreadydescribed, it is proposed to provide further structures (such as firststructures 810 in FIG. 8) between the DBF structures 720. However, theprinting of these first structures is also difficult since the highresolution features 725 which create the asymmetric resist profile limitspace available on the patterning device for the first structures. Adifferent method is therefore desirable for printing a target whichcontains both pattern profile asymmetry at a pitch captured by themetrology tool and the required pattern density.

It is therefore proposed to generate the second structures 720 and firststructures 810 in two separate exposures, without the need for a secondpatterning device or second patterning device pattern. This method isillustrated in FIGS. 14a and 14 b.

FIG. 14a shows a patterning device 1400 region, comprising a mainproduct area 1405 and a scribe area 1410 at the periphery of the mainproduct area 1405 (for clarity the scribe area 1410 is shown largerrelative to the main product area 1405 than it really is). In the scribearea 1410, on one side of the main product area, are the secondstructures 1415. Also shown is a detail of the second structures 1415′and the structures 1420 which will actually be printed on the substratefollowing exposure of the second structures 1415. In the scribe area1410, directly opposite the second structures 1415 on the other side ofthe main product area 1405, are the first structures 1425. Again thereis shown a detail of the first structures 1425′ and the structures 1430which will actually be printed on the substrate following exposure ofthe first structures 1425.

FIG. 14b shows how the complete structure is printed. It shows thepatterning device 1400 region in position for exposure on a substrate.It also shows (dotted) the patterning device 1400′ region in itsrelative previous position for exposure immediately preceding thepresent exposure. When exposing the product onto a substrate, it isexposed such that the scribe lane area 1410 on one side of the productarea overlaps the scribe lane area 1410 on the opposite side of theproduct area of the previous exposure. Provided that the secondstructures 1415 and first structures 1425 are correctly positioned onopposite sides of the product area on the patterning device pattern, anddirectly opposing one another (around the y-axis only), their areasoverlap 1440 during each pair of exposures (on the same row). Of coursethe second structures 1415 and first structures 1425 should bepositioned so that the individual structures alternate within the areaof overlap 1440, such the resultant printed structures 1445 take thecorrect form with the second structures 1415 and first structures 1425being interlaced.

It should be noted that such a method involves a darkfield (negative)exposure as illustrated in the drawings (where dark areas indicateresist, the resultant target being a trench-type target). This isbecause there would be no resist remaining on the substrate between thestructures after the first exposure of a conventional target, from whichto form the second structures.

FIGS. 14a and 14b depict the interlacing of symmetric and asymmetricstructures, and in particular structures of a form shown in FIG. 8(b).However, this method may be used to print any of the target structuresdisclosed herein. Additionally, it is also possible to interlace otherfeatures and/or arrays of smaller features using the same method.

In another embodiment, the first structures may be dummy structures. Insuch an arrangement the dummy structures are not used to generate a CoGshift as described above, the focus measurements being taken from theasymmetry of the second structures only. The resulting printedstructures, with such dummy structures, will have both the requiredpattern density and asymmetric profile at a pitch within the capturewindow of the metrology tool. The dummy structures may take any form(for example very high resolution multiple lines between each pair ofthe second structures).

The use of this method for increasing pattern density is not restrictedto DBF metrology but can be applied to any metrology feature to increasepattern density, and for example any metrology feature that makes use ofa specific imaging effect printed at a relaxed pitch.

At its widest, this section discloses a method of printing a compoundstructure via one or more patterning devices or patterning devicepatterns, wherein the method comprises:

performing a first exposure onto a substrate, wherein the first exposurecomprises printing first printed structures from first patterning devicestructures located on a first patterning device or a first patterningdevice pattern; and

performing a second exposure onto a substrate, adjacent to the firstexposure and such that there is a region of overlap of the firstexposure and second exposure on the substrate, the region of overlapcomprising the first printed structures,

wherein the second exposure comprises printing in the region of overlapon the substrate, second printed structures from second patterningdevice structures located on the first patterning device or firstpatterning device pattern or on a second patterning device or secondpatterning device pattern, thereby forming the compound structure.

The patterning device or patterning device pattern may comprise aproduct area, and peripheral to the product area, a scribe line area,and the first patterning device structures, and second patterning devicestructures may be located in the scribe lane area of the patterningdevice or patterning device pattern, or the scribe lane area of adifferent patterning device or patterning device pattern. The firstpatterning device structures may be located at a first side of thescribe lane area, and second patterning device structures may be locatedon a side opposite the first side of the product area, such that thefirst patterning device structures are located directly opposite(relative to a single axis) the second patterning device structures.

Also disclosed is a patterning device comprising a product area, andperipheral to the product area, a scribe line area, the patterningdevice further comprising first patterning device structures, and secondpatterning device structures located within the scribe lane area of thepatterning device; the first patterning device structures being locatedat a first side of the scribe lane area, and second patterning devicestructures being located on a side opposite the first side of theproduct area, such that the first patterning device structures arelocated directly opposite (relative to a single axis) the secondpatterning device structures.

Embodiments are disclosed in the subsequent numbered clauses:

1. A method of obtaining focus information relating to a lithographicprocess, the method comprising:

illuminating a first target, the first target comprising alternatingfirst and second structures, the form of the second structures beingfocus dependent such that its form depends upon the focus of a patternedbeam used to form the first target and the form of the first structuresnot having the same focus dependence as that of the second structures;and

detecting radiation scattered by the first target to obtain for thatfirst target an asymmetry measurement representing an overall asymmetryof the first target, the asymmetry measurement being indicative of thefocus of the patterned beam when forming the first target.

2. The method of clause 1, wherein the form of the first structures hasno deliberate dependence upon the focus of the patterned beam whenforming the first target.3. The method of clause 1, wherein the form of the first structures isdependent upon the focus of the patterned beam when forming the firsttarget, the focus dependence being different to that of the secondstructures.4. The method of clause 3, wherein the focus dependence differs for thefirst and second structures such that a focus shift causes shifts in acenter of gravity of the first structures and the second structureswhich are in opposite directions.5. The method of any of clauses 2 to 4, wherein a patterning device isused to produce the patterned beam, the patterning device comprisingfirst structure features to form the first structures and secondstructure features to form the second structures, wherein:

the first structure features and the second structure features bothcomprise a low resolution substructure feature to form low resolutionsubstructures; and

the second structure features and, where the form of the firststructures is focus dependent, the first structure features comprise ahigh resolution substructure feature to form high resolutionsubstructures such that the number and/or size of high resolutionsubstructures in the first target depends upon the focus of thepatterned beam when forming the first target.

6. The method of clause 5, wherein the linewidth of the low resolutionsubstructures is between 10 nm and 50 nm greater than the linewidth ofthe high resolution substructures.7. The method of clause 5 or clause 6, wherein the high resolutionsubstructures comprise a plurality of elongate high resolutionsubstructures extending in a direction normal to that of the lowresolution substructures.8. The method of clause 5 or clause 6, wherein the high resolutionsubstructures comprise a plurality of elongate high resolutionsubstructures arranged parallel to the low resolution substructures.9. The method of clause 5 or clause 6, wherein the high resolutionsubstructures comprise a two dimensional array of high resolutionsubstructures.10. The method of any of clauses 5 to 9, wherein the high resolutionsubstructures comprise high resolution substructures having differentlinewidths.11. The method of clause 10, wherein the high resolution substructuresare arranged in order of decreasing linewidth from the low resolutionsubstructure.12. The method of any of clauses 5 to 11, wherein the high resolutionsubstructures each have a linewidth less than 50 nm.13. The method of any of clauses 5 to 12, wherein the patterning devicecomprises mask effect features which cause a three-dimensional maskeffect such that the first target is formed with a best focus which isoffset from a best focus for product features on the patterning device.14. The method of clause 13, wherein the mask effect features compriseone or more of the high resolution substructures.15. The method of any of clauses 5 to 12, wherein the first target isconfigured such that the asymmetry measurement comprises a firstasymmetry component resultant from a center of gravity shift between thefirst structures and the second structures, and a second asymmetrycomponent resultant from asymmetry in the profile of the secondstructures, and wherein the first target is formed with a best focuswhich is offset from a best focus for product features on the patterningdevice, the best focus offset resulting from the second asymmetrycomponent.16. The method of clause 15, further comprising optimizing the bestfocus offset through variations of the second structure profile and therelative placement of the first structures and the second structures.17. The method of any preceding clause, further comprising illuminatingat least a second target, the second target comprising third and fourthstructures, the fourth structures having at least one parameterdifferent to the second structures.18. The method of clause 17, wherein the placement of the thirdstructures relative to the fourth structures in the second target issimilar to the placement of the first structures relative to the secondstructures in the first target.19. The method of clause 17 or clause 18, further comprising:

detecting radiation scattered by the second target to obtain for thesecond target a second asymmetry measurement;

determining the difference of the second asymmetry measurement and theasymmetry measurement from the first target; and

using the difference to determine the sign of a focus determination.

20. The method of clause 17 or clause 18, further comprising:

constructing a multi-variate focus model of the first and secondtargets; and

using the model to determine the sign and/or value of a focusdetermination.

21. The method of any of clauses 5 to 20, further comprising forming thefirst target in at least two exposures, the forming comprising:

performing a first exposure onto a substrate, wherein the first exposurecomprises forming the first structures or the second structures; and

performing a second exposure onto the substrate, adjacent to the firstexposure and such that there is a region of overlap of the firstexposure and second exposure on the substrate, the region of overlapcomprising the formed first structures or formed second structures,

wherein the second exposure comprises forming in the region of overlapon the substrate, the other of the first structures or the secondstructures, thereby forming the first target.

22. The method of clause 21, wherein the first and second structurescomprise trenches in photoresist.23. The method of clause 21 or clause 22, wherein the patterning devicecomprises a product area, and peripheral to the product area, a scribeline area, and the first structure features and the second structurefeatures are located in the scribe lane area.24. The method of clause 23, wherein the first structure features arelocated at a first side of the scribe lane area, and the secondstructure features are located on a side opposite the first side of theproduct area, such that the first structure features are locateddirectly opposite, relative to a single axis, of the second structurefeatures.25. The method of any preceding clause further comprising using theasymmetry measurement to determine focus of the patterned beam used toform the target.26. The method of any preceding clause, further comprising performing acalibration process and a monitor and control process.27. The method of clause 26, comprising, during the calibration process,using the patterned beam to form the first target by exposing acalibration substrate using multiple combinations of focus and exposureoffsets, wherein the illuminating and detecting is performed on thecalibration substrate and comprises obtaining a plurality of theasymmetry measurements as a function of focus, and further comprisingcalculating a focus calibration curve from the plurality of theasymmetry measurements and corresponding focus offsets.28. The method of clause 27, comprising, during the monitor and controlprocess, using the patterned beam to form the first target by exposing amonitor substrate, wherein the illuminating and detecting is performedon the monitor substrate, and further comprising using the focuscalibration curve to convert the asymmetry measurement to a focusmeasurement.29. The method of clause 28, wherein the monitor substrate is exposedwith a deliberate focus offset sufficient such that all of the focusmeasurements are on one side of a peak of the focus calibration curveand further comprising calculating actual focus measurements as adifference of the focus measurements obtained using the focuscalibration curve and the deliberate focus offset.30. The method of clause 28 or clause 29, wherein the focus measurementsare used to optimize focus settings during subsequent lithographicprocesses.31. The method of any preceding clause, wherein the asymmetrymeasurement comprises calculating the difference between detectedpositive and negative higher diffraction orders.32. The method of any preceding clause, wherein the patterned beam has awavelength within the region of 5 nm to 20 nm.33. The method of any preceding clause, further comprising using apatterned beam to form the target as part of a lithographic process.34. A patterning device comprising a first pattern for patterning a beamto form a first target comprising alternating first and secondstructures, wherein the patterning device comprises:

first structure features to form the first structures; and

second structure features to form the second structures,

wherein the second structure features are configured such that the formof the second structures is focus dependent such that its form dependsupon the focus of the patterned beam when forming the first target andthe first structure features are configured such that the form of thefirst structures does not have the same focus dependence as that of thesecond structures.

35. The patterning device of clause 34, wherein the first structurefeatures are configured such that the form of the first structures haveno deliberate dependence upon the focus of the patterned beam whenforming the first target.36. The patterning device of clause 34, wherein the first structurefeatures are configured such that the form of the first structures aredependent upon the focus of the patterned beam when forming the firsttarget, the focus dependence being different to that of the secondstructures.37. The patterning device of clause 36, wherein the first structurefeatures are configured such that the focus dependence differs for thefirst and second structures in such a way that a focus shift causesshifts in a center of gravity of the first structures and the secondstructures which are in opposite directions.38. The patterning device of any of clauses 35 to 37, wherein:

the first structure features and the second structure features bothcomprise a low resolution substructure feature for forming lowresolution substructures; and

the second structure features and, where the form of the firststructures is focus dependent, the first structure features comprise ahigh resolution substructure feature for forming high resolutionsubstructures such that the number and/or size of high resolutionsubstructures in the first target depends upon the focus of thepatterned beam when forming the first target.

39. The patterning device of clause 38, wherein the high resolutionsubstructure features comprise a plurality of elongate high resolutionsubstructure features extending in a direction normal to that of the lowresolution substructure features.40. The patterning device of clause 38, wherein the high resolutionsubstructure features comprise a plurality of elongate high resolutionsubstructure features arranged parallel to the low resolutionsubstructure features.41. The patterning device of clause 38, wherein the high resolutionsubstructure features comprise a two dimensional array of highresolution substructure features.42. The patterning device of any of clauses 38 to 41, wherein theplurality of high resolution substructure features comprise highresolution substructure features having different linewidths.43. The patterning device of clause 42, wherein the plurality of highresolution substructure features are arranged in order of decreasinglinewidth from the low resolution substructure feature.44. The patterning device of any of clauses 38 to 43, wherein the highresolution substructure features each have a linewidth less than 50 nm.45. The patterning device of any of clauses 38 to 44, comprising productfeatures and mask effect features, the mask effect features causing athree-dimensional mask effect such that the first target is formed witha best focus which is offset from a best focus for the product features.46. The patterning device of clause 45, wherein the mask effect featurescomprise one or more of the high resolution substructures.47. The patterning device of any of clauses 38 to 46, being operable topattern a beam to form the first target according to a lithographicprocess.48. The patterning device of any of clauses 38 to 47, comprising aproduct area, and peripheral to the product area, a scribe line area,wherein the first structure features and second structure features arelocated within the scribe lane area, the first structure features arelocated at a first side of the scribe lane area, and the secondstructure features are located on a side opposite the first side of theproduct area, such that the first structure features are locateddirectly opposite, relative to a single axis, of the second structurefeatures.49. The patterning device of clause 48, wherein the patterning devicecomprises a second pattern for patterning a beam to form a secondtarget, the second pattern comprising third and fourth structurefeatures, the fourth structure features having at least one parameterdifferent to the second structure features.50. The patterning device of clause 49, wherein the placement of thethird structure features relative to the fourth structure features inthe second pattern is similar to the placement of the first structurefeatures relative to the second structure features in the first pattern.51. A substrate comprising a first target having alternating first andsecond structures wherein:

the first structure and the second structure both comprise a lowresolution substructure; and

at least the second structure comprises a high resolution substructure,the number and/or size of high resolution substructures in the firsttarget having been determined by the focus of a patterned beam used toform the first target.

52. The substrate of clause 51, wherein the high resolutionsubstructures comprise a plurality of elongate high resolutionsubstructures extending in a direction normal to that of the lowresolution substructures.53. The substrate of clause 51, wherein the high resolutionsubstructures comprise a plurality of elongate high resolutionsubstructures arranged parallel to the low resolution substructures.54. The substrate of clause 51, wherein the high resolutionsubstructures comprise a two dimensional array of high resolutionsubstructures.55. The substrate of any of clauses 51 to 54, wherein the highresolution substructures comprise high resolution substructures havingdifferent linewidths.56. The substrate of clause 55, wherein the high resolutionsubstructures are arranged in order of decreasing linewidth from the lowresolution substructure.57. The substrate of any of clauses 41 to 56, wherein the highresolution substructures each have a linewidth less than 50 nm.58. The substrate of any of clauses 51 to 57, wherein the first targetis formed using the patterning device of any of clauses 34 to 50.59. The substrate of any of clauses 41 to 58, comprising a monitorsubstrate to monitor the lithographic process.60. The substrate of any of clauses 51 to 59, further comprising atleast a second target, the second target comprising third and fourthstructures, the fourth structures having at least one parameterdifferent to the second structures.61. The substrate of clause 60, wherein the placement of the thirdstructures relative to the fourth structures in the second target issimilar to the placement of the first structures relative to the secondstructures in the first target.62. A lithographic apparatus being operable to perform the method of anyof clauses 1 to 33.63. A computer program comprising a sequence of machine-readableinstructions describing the method of any of clauses 1 to 33.64. A data storage medium having a computer program as defined in clause63 stored therein.

Although the embodiments are described in relation to EUV lithography,embodiments herein are applicable to lithography processes usingradiation at other (e.g., longer) wavelengths, for example at 193 nm.

Although specific reference may be made in this text to the use oflithographic apparatus in the manufacture of ICs, it should beunderstood that the lithographic apparatus described herein may haveother applications, such as the manufacture of integrated opticalsystems, guidance and detection patterns for magnetic domain memories,flat-panel displays, liquid-crystal displays (LCDs), thin film magneticheads, etc. The skilled artisan will appreciate that, in the context ofsuch alternative applications, any use of the terms “wafer” or “die”herein may be considered as synonymous with the more general terms“substrate” or “target portion”, respectively. The substrate referred toherein may be processed, before or after exposure, in for example atrack (a tool that typically applies a layer of resist to a substrateand develops the exposed resist), a metrology tool and/or an inspectiontool. Where applicable, the disclosure herein may be applied to such andother substrate processing tools. Further, the substrate may beprocessed more than once, for example in order to create a multi-layerIC, so that the term substrate used herein may also refer to a substratethat already contains multiple processed layers.

Although specific reference may have been made above to the use ofembodiments of the invention in the context of optical lithography, itwill be appreciated that the invention may be used in otherapplications, for example imprint lithography, and where the contextallows, is not limited to optical lithography. In imprint lithography atopography in a patterning device defines the pattern created on asubstrate. The topography of the patterning device may be pressed into alayer of resist supplied to the substrate whereupon the resist is curedby applying electromagnetic radiation, heat, pressure or a combinationthereof. The patterning device is moved out of the resist leaving apattern in it after the resist is cured.

The terms “radiation” and “beam” used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g.having a wavelength of or about 365, 355, 248, 193, 157 or 126 nm) andextreme ultra-violet (EUV) radiation (e.g. having a wavelength in therange of 5-20 nm), as well as particle beams, such as ion beams orelectron beams.

The term “lens”, where the context allows, may refer to any one orcombination of various types of optical components, includingrefractive, reflective, magnetic, electromagnetic and electrostaticoptical components.

While specific embodiments of the invention have been described above,it will be appreciated that the invention may be practiced otherwisethan as described. For example, the invention may take the form of acomputer program containing one or more sequences of machine-readableinstructions describing a method as disclosed above, or a data storagemedium (e.g. semiconductor memory, magnetic or optical disk) having sucha computer program stored therein.

The descriptions above are intended to be illustrative, not limiting.Thus, it will be apparent to one skilled in the art that modificationsmay be made to the invention as described without departing from thescope of the claims set out below.

1.-64. (canceled)
 65. A method of obtaining focus information relatingto a lithographic process, the method comprising: illuminating a firsttarget, the first target comprising alternating first and secondstructures, the form of the second structures being focus dependent suchthat its form depends upon the focus of a patterned beam used to formthe first target and the form of the first structures not having thesame focus dependence as that of the second structures, wherein apatterning device is used to produce the patterned beam, the patterningdevice comprising first structure features to form the first structuresand second structure features to form the second structures, the secondstructure features comprise a low resolution substructure feature toform low resolution substructures; and the second structure featurescomprise a high resolution substructure feature to form high resolutionsubstructures, the high resolution substructures comprising a pluralityof elongate high resolution substructures arranged essentially parallelto the low resolution substructures; and detecting radiation scatteredby the first target to obtain for that first target an asymmetrymeasurement representing an overall asymmetry of the first target, theasymmetry measurement being indicative of the focus of the patternedbeam when forming the first target.
 66. The method of claim 65, whereinthe high resolution substructures comprise a two dimensional array ofhigh resolution substructures.
 67. The method of claim 65, wherein thehigh resolution substructures comprise high resolution substructureshaving different linewidths.
 68. The method of claim 67, wherein thehigh resolution substructures are arranged in order of decreasinglinewidth from the low resolution substructure.
 69. The method of claim65, wherein the form of the first structures has no deliberatedependence upon the focus of the patterned beam when forming the firsttarget.
 70. The method of claim 65, wherein the form of the firststructures is dependent upon the focus of the patterned beam whenforming the first target, the focus dependence being different to thatof the second structures.
 71. The method of claim 70, wherein the focusdependence differs for the first and second structures such that a focusshift causes shifts in a center of gravity of the first structures andthe second structures which are in opposite directions.
 72. The methodof claim 65, wherein the first structure features also comprise a lowresolution substructure feature to form low resolution substructures;and, where the form of the first structures is focus dependent, thefirst structure features also comprise a high resolution substructurefeature to form high resolution substructures such that the numberand/or size of high resolution substructures in the first target dependsupon the focus of the patterned beam when forming the first target. 73.The method of claim 65, wherein a linewidth of the low resolutionsubstructures is between 10 nm and 50 nm greater than a linewidth of thehigh resolution substructures.
 74. The method of claim 65, wherein thepatterning device comprises mask effect features which cause athree-dimensional mask effect such that the first target is formed witha best focus which is offset from a best focus for product features onthe patterning device.
 75. The method of claim 74, wherein the maskeffect features comprise one or more of the high resolutionsubstructures.
 76. The method of claim 65, wherein the first target isconfigured such that the asymmetry measurement comprises a firstasymmetry component resultant from a center of gravity shift between thefirst structures and the second structures, and a second asymmetrycomponent resultant from asymmetry in the profile of the secondstructures, and wherein the first target is formed with a best focuswhich is offset from a best focus for product features on the patterningdevice, the best focus offset resulting from the second asymmetrycomponent.
 77. The method of claim 76, further comprising optimizing thebest focus offset through variations of the second structure profile andrelative placement of the first structures and the second structures.78. The method of claim 65, further comprising illuminating at least asecond target, the second target comprising third and fourth structures,the fourth structures having at least one parameter different to thesecond structures.
 79. The method of claim 78, wherein the placement ofthe third structures relative to the fourth structures in the secondtarget is similar to the placement of the first structures relative tothe second structures in the first target.
 80. The method of claim 78,further comprising: detecting radiation scattered by the second targetto obtain for the second target a second asymmetry measurement;determining the difference of the second asymmetry measurement and theasymmetry measurement from the first target; and using the difference todetermine the sign of a focus determination.
 81. The method of claim 78,further comprising: constructing a multi-variate focus model of thefirst and second targets; and using the model to determine the signand/or value of a focus determination.
 82. The method of claim 65,further comprising forming the first target in at least two exposures,the forming comprising: performing a first exposure onto a substrate,wherein the first exposure comprises forming the first structures or thesecond structures; and performing a second exposure onto the substrate,adjacent to the first exposure and such that there is a region ofoverlap of the first exposure and second exposure on the substrate, theregion of overlap comprising the formed first structures or formedsecond structures, wherein the second exposure comprises forming in theregion of overlap on the substrate, the other of the first structures orthe second structures, thereby forming the first target.
 83. The methodof claim 82, wherein the first and second structures comprise trenchesin photoresist.
 84. The method of claim 82, wherein the patterningdevice comprises a product area, and peripheral to the product area, ascribe line area, and the first structure features and the secondstructure features are located in the scribe lane area.
 85. A patterningdevice comprising a first pattern for patterning a beam to form a firsttarget comprising alternating first and second structures, wherein thepatterning device comprises: first structure features to form the firststructures; and second structure features to form the second structures,the second structure features comprising a low resolution substructurefeature to form low resolution substructures and a high resolutionsubstructure feature to form high resolution substructures, the highresolution substructures comprising a plurality of elongate highresolution substructures arranged essentially parallel to the lowresolution substructures, wherein the second structure features areconfigured such that the form of the second structures is focusdependent such that its form depends upon the focus of the patternedbeam when forming the first target and the first structure features areconfigured such that the form of the first structures does not have thesame focus dependence as that of the second structures.
 86. A substratecomprising a first target having alternating first and second structureswherein: the first structure and the second structure both comprise alow resolution substructure; and at least the second structure comprisesa high resolution substructure, the high resolution substructurecomprising one or more high resolution substructures arrangedessentially parallel to the low resolution substructure, the numberand/or size of high resolution substructures in the first target havingbeen determined by the focus of a patterned beam used to form the firsttarget.
 87. A non-transitory data storage medium having machine-readableinstructions that when executed are configured to cause a computersystem to cause performance of the method of claim 65.